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SUD35N10-26P-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 35A TO252
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Inventory: 985
Minimum: 1
Total Price: USD $0.15
Unit Price: USD $0.150151
≥1 USD $0.150151
≥10 USD $0.145734
≥100 USD $0.141318
≥500 USD $0.135798

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 1.437803g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 8.3W Ta 83W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 8.3W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 26m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 4.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 12V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Rise Time 10 ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 7V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 35A
Drain-source On Resistance-Max 0.026Ohm
Pulsed Drain Current-Max (IDM) 40A
Avalanche Energy Rating (Eas) 55 mJ

Dimensions

Height 2.38mm
Length 6.73mm
Width 6.22mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

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