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IXFE180N20

IXYS
RoHS
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Package SOT-227-4, miniBLOC
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 158A ISOPLUS227
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Technical Details

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series HiPerFET?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 500W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 500W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 14400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 158A Tc
Gate Charge (Qg) (Max) @ Vgs 380nC @ 10V
Rise Time 85ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 36 ns
Turn-Off Delay Time 180 ns
Continuous Drain Current (ID) 158A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.012Ohm
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 720A

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