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EPC2001

EPC
RoHS
RoHS RoHS compliant
Package Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description TRANS GAN 100V 25A BUMPED DIE
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die Outline (11-Solder Bar)

Technical

Operating Temperature -40°C~125°C TJ
Packaging Cut Tape (CT)
Published 2011
Series eGaN?
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology GaNFET (Gallium Nitride)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 2.5V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 50V
Current - Continuous Drain (Id) @ 25°C 25A Ta
Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) +6V, -5V
Continuous Drain Current (ID) 25A
Input Capacitance 950pF
Rds On Max 7 mΩ

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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