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RoHS
RoHS RoHS compliant
Package 8-PowerSMD, Flat Leads
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CHANNEL 30V 85A 8DFN
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Inventory: 1230
Minimum: 1
Total Price: USD $0.96
Unit Price: USD $0.96096
≥1 USD $0.96096
≥10 USD $0.789096
≥100 USD $0.613444
≥500 USD $0.519954
≥1000 USD $0.423552

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mounting Type Surface Mount
Package / Case 8-PowerSMD, Flat Leads
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 50W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.85m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 15V
Current - Continuous Drain (Id) @ 25°C 85A Tc
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 130A
Drain-source On Resistance-Max 0.0025Ohm
Pulsed Drain Current-Max (IDM) 260A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 32 mJ

Compliance

RoHS Status ROHS3 Compliant
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