Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 1997
Series POWER MOS 7?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3250W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 78m Ω @ 72.5A, 10V
Vgs(th) (Max) @ Id 5V @ 20mA
Input Capacitance (Ciss) (Max) @ Vds 28500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 145A Tc
Gate Charge (Qg) (Max) @ Vgs 1068nC @ 10V
Rise Time 14ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 55 ns
Turn-Off Delay Time 140 ns
Continuous Drain Current (ID) 145A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.078Ohm
Avalanche Energy Rating (Eas) 3200 mJ