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JANTXV2N6802U
Microsemi CorporationRoHS
/
Package 18-CLCC
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 18-CLCC
Transistor Element Material SILICON
Compliance
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1997
Series Military, MIL-PRF-19500/557
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 15
Technology MOSFET (Metal Oxide)
Terminal Position QUAD
Reference Standard MIL-19500/557
JESD-30 Code R-CQCC-N15
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 800mW Ta 25W Tc
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.5A Tc
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Rise Time 30ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 2.5A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 1.725Ohm
Pulsed Drain Current-Max (IDM) 11A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 0.31 mJ
Alternative Model
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