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2N2906AUB

Microsemi Corporation
RoHS
/
Package 3-SMD, No Lead
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Trans GP BJT PNP 60V 0.6A 3-Pin UB
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 2 weeks ago)

Compliance

Radiation Hardening No
RoHS Status Non-RoHS Compliant

Technical

Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Max Power Dissipation 500mW
Number of Elements 1
Polarity PNP
Power Dissipation 500mW
Power - Max 500mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 10V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 60V
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 600mA
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V

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